PART |
Description |
Maker |
HYM64VX005GCL-60 HYM64VX005GCD-60 HYM64V2005GCD-60 |
2M X 64 EDO DRAM MODULE, 60 ns, ZMA144 4M X 64 EDO DRAM MODULE, 60 ns, ZMA144 144 pin SO-DIMM EDO-DRAM Modules 8MB , 16MB, 32MB & 64MB density 2M x 64 Bit EDO DRAM Module (SO-DIMM)... 4M x 64 Bit EDO DRAM Module (SO-DIMM)...
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INFINEON TECHNOLOGIES AG
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HYB5117405BJ-60 HYB5117405BJ-50 HYB5116405BJ-60 HY |
4M x 4 Bit EDO DRAM 3.3 V 2k 60 ns 4M x 4 Bit EDO DRAM 3.3 V 2k 50 ns 4M x 4 Bit 2k 3.3 V 60 ns EDO DRAM 4M x 4 Bit 2k 3.3 V 50 ns EDO DRAM -4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO) From old datasheet system
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Infineon SIEMENS[Siemens Semiconductor Group]
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HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 |
1M x 16 Bit 1k 5 V 60 ns EDO DRAM 1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM 1M x 16 Bit 1k 5 V 50 ns EDO DRAM -1M x 16-Bit Dynamic RAM 1k Refresh 1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM 1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
IS41C82002-50TI IS41LV82002-50T IS41C82002-60T IS4 |
x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM 2M X 8 EDO DRAM, 60 ns, PDSO28 2M X 8 EDO DRAM, 50 ns, PDSO28
|
Atmel, Corp. INTEGRATED SILICON SOLUTION INC
|
HYM364025GS-60 HYM364025GS-50 HYM364025S-60 HYM364 |
4M x 36-Bit EDO - DRAM Module 4米36位EDO公司-记忆体模 4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72 4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 50 ns, SMA72 4M x 36 Bit EDO DRAM Module with Parity
|
INFINEON TECHNOLOGIES AG SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG Infineon Technologies AG
|
HYM5V64834ASLTZG-60 HYM5V64834ASLTZG-50 HYM5V64834 |
8M X 64 EDO DRAM MODULE, 50 ns, DMA144 SODIMM-144 x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Hynix Semiconductor, Inc. NXP Semiconductors N.V.
|
AS4C4M4E1-50JC AS4C4M4E1-50TC AS4C4M4E1-50TI AS4C4 |
4M X 4 EDO DRAM, 60 ns, PDSO24 x4 EDO Page Mode DRAM
|
ALLIANCE SEMICONDUCTOR CORP
|
AS4C256K16E0-30JC AS4C256K16E0-35JC |
5V 256Kx16 CMOS DRAM (EDO) 256K X 16 EDO DRAM, 30 ns, PDSO40 5V 256Kx16 CMOS DRAM (EDO) 256K X 16 EDO DRAM, 35 ns, PDSO40 5V 256Kx16 CMOS DRAM (EDO) 5V56Kx16的CMOS的DRAM(江户)
|
Alliance Semiconductor, Corp.
|
AS4C1M16E5-50TI AS4C1M16E5-50JI AS4C1M16E5-60TI AS |
5V 1M×16 CMOS DRAM (EDO) x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Alliance Semiconductor Corporation Integrated Silicon Solution, Inc. Lattice Semiconductor, Corp.
|